STUDY OF SURFACE ELECTRONIC-STRUCTURE OF SI(111)-GA BY RESONANT OPTICAL 2ND HARMONIC-GENERATION

被引：23

作者：

KELLY, PV

OMAHONY, JD

MCGILP, JF

RASING, T

机构：

[1] CATHOLIC UNIV NIJMEGEN, MAT RES INST, 6525 ED NIJMEGEN, NETHERLANDS

[2] UNIV DUBLIN TRINITY COLL, DEPT PURE & APPL PHYS, DUBLIN 2, IRELAND

来源：

SURFACE SCIENCE | 1992年 / 269卷

关键词：

D O I：

10.1016/0039-6028(92)91360-N

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The epitaxial growth of Ga on Si(111) has been studied in situ by optical second harmonic generation (SHG). Enhanced intensity near 1/3 of a monolayer was observed. By measuring both intensity and absolute phase of the SHG signals, this enhancement can be unambiguously related to electronic resonances of the Si(111)square-root 3 X square-root 3-Ga structure.

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收藏

页码：849 / 853

页数：5

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