FABRICATION OF IRSI3 P-SI SCHOTTKY DIODES BY A MOLECULAR-BEAM EPITAXY TECHNIQUE

被引：6

作者：

LIN, TL

IANNELLI, JM

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 20期

关键词：

D O I：

10.1063/1.103002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

IrSi3/p-Si Schottky diodes have been fabricated by a molecular beam epitaxy technique at 630 °C. Good surface morphology was observed for IrSi3 layers grown at temperatures below 680 °C, and an increasing tendency to form islands is observed in samples grown at higher temperatures. Good diode current-voltage characteristics were observed and Schottky barrier heights of 0.14-0.18 eV were determined by activation energy analysis and spectral response measurement.

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页码：2013 / 2015

页数：3

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