A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION EXAMINATION OF THE DEFECT STRUCTURE IN GAAS(001) FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引：5

作者：

DAWERITZ, L

HEY, R

BERGER, H

机构：

来源：

THIN SOLID FILMS | 1984年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0040-6090(84)90419-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：165 / 174

页数：10

共 16 条

[1] MORPHOLOGICAL DEFECTS ARISING DURING MBE GROWTH OF GAAS [J].

BACHRACH, RZ ;

KRUSOR, BS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :756-764

[2] MICROTWINNING AND GROWTH DEFECTS IN GAAS MBE LAYERS [J].

BAFLEUR, M ;

MUNOZYAGUE, A ;

ROCHER, A .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) :531-538

[3] CRYSTAL, IMPURITY-RELATED AND GROWTH DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS [J].

BAFLEUR, M ;

MUNOZYAGUE, A .

THIN SOLID FILMS, 1983, 101 (04) :299-310

[4] WHISKER CRYSTALS OF GALLIUM ARSENIDE AND GALLIUM PHOSPHIDE GROWN BY VAPOR-LIQUID-SOLID MECHANISM [J].

BARNS, RL ;

ELLIS, WC .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) :2296-&

[5] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHAI, YG ;

CHOW, R .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :796-798

[6]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[7] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J].

CHO, AY .

THIN SOLID FILMS, 1983, 100 (04) :291-317

[8] STOICHIOMETRY AND PHASE COMPOSITION OF VACUUM-DEPOSITED FILMS OF AIIBVI COMPOUNDS [J].

DAWERITZ, L .

JOURNAL OF CRYSTAL GROWTH, 1974, 23 (04) :307-312

[9] FACETTING, STEPS AND RECONSTRUCTION ON GAAS (001) [J].

DAWERITZ, L .

SURFACE SCIENCE, 1982, 118 (03) :585-596

[10]

HEY R, UNPUB

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