CRYSTAL, IMPURITY-RELATED AND GROWTH DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS

[1] ABRAHAMS MS, 1965, J APPL PHYS, V36, P954

[2] MORPHOLOGICAL DEFECTS ARISING DURING MBE GROWTH OF GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 756 - 764

[3] MICROTWINNING AND GROWTH DEFECTS IN GAAS MBE LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) : 531 - 538

[4] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (128): : 301 - &

[5] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798

[6] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[7] GILES PL, 1981, I PHYS C SER, V56, P669

[8] JOYCE BA, 1981, 1ST EUR MOL BEAM EP

[9] STACKING FAULT NUCLEATION IN EPITAXIAL SILICON ON VARIOUSLY ORIENTED SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) : 1570 - &

[10] CHROMIUM AND TELLURIUM REDISTRIBUTION IN GAAS AND AL0.3GA0.7AS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5986 - 5991

[1] ABRAHAMS MS, 1965, J APPL PHYS, V36, P954

[2] MORPHOLOGICAL DEFECTS ARISING DURING MBE GROWTH OF GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 756 - 764

[3] MICROTWINNING AND GROWTH DEFECTS IN GAAS MBE LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) : 531 - 538

[4] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (128): : 301 - &

[5] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798

[6] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[7] GILES PL, 1981, I PHYS C SER, V56, P669

[8] JOYCE BA, 1981, 1ST EUR MOL BEAM EP

[9] STACKING FAULT NUCLEATION IN EPITAXIAL SILICON ON VARIOUSLY ORIENTED SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) : 1570 - &

[10] CHROMIUM AND TELLURIUM REDISTRIBUTION IN GAAS AND AL0.3GA0.7AS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5986 - 5991