MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION CDTE ON SI USING A (CA,BA)F2 BUFFER LAYER

被引：44

作者：

ZOGG, H ^{[1
]}

BLUNIER, S ^{[1
]}

机构：

[1] ARBEITSGEMEINSCHAFT IND FORSCH,CH-8093 ZURICH,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 22期

关键词：

D O I：

10.1063/1.97272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1531 / 1533

页数：3

共 17 条

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APPLIED PHYSICS LETTERS, 1986, 48 (08) :523-525

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QADRI, SB .

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[5] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION, HETERO-EPITAXIAL CDTE-FILMS ON INSB (001) [J].

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WILLIAMS, GM ;

YOUNG, IM .

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[6]

GANDHI SK, 1985, APPL PHYS LETT, V47, P742

[7] PHOTOLUMINESCENCE OF CDTE - A COMPARISON OF BULK AND EPITAXIAL MATERIAL [J].

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SCHETZINA, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :76-82

[8] SUMMARY ABSTRACT - GROWTH OF CDTE AND HGCDTE BY MOLECULAR-BEAM EPITAXY [J].

HARRIS, KA ;

HWANG, S ;

BLANKS, DK ;

COOK, JW ;

SCHETZINA, JF ;

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[9] METALORGANIC GROWTH OF EPITAXIAL-FILMS OF CDTE AND HGCDTE ON SAPPHIRE SUBSTRATES [J].

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LEMONIAS, PJ .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :276-278

[10] GROWTH OF CDTE-FILMS ON SILICON BY MOLECULAR-BEAM EPITAXY [J].

LO, Y ;

BICKNELL, RN ;

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