TIME-RESOLVED PHOTOLUMINESCENCE OF UNDOPED INP

被引：10

作者：

KEYES, BM

DUNLAVY, DJ

AHRENKIEL, RK

SHAW, G

SUMMERS, GP

TZAFARAS, N

LENTZ, C

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] AT&T MICROELECTR LAB,READING,PA 19612

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.355962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Energy and time-resolved photoluminescence data have been obtained for nominally undoped (n 4.5 X 10(15) cm-3) bulk InP grown by the vertical-gradient freeze method. The data were taken as a function of temperature, from 80 to 290 K, and analyzed using a solution to the continuity equation. The resulting lifetime values range from 300 ns to 3.2 mus, and surface recombination velocities were fund to be on the order of 10(3) cm/s. The temperature dependence can be explained by assuming a radiatively limited recombination with a resulting B coefficient greater-than-or-equal-to 5.9 X 10(-11) cm3/s at 300 K.

引用

页码：4249 / 4251

页数：3

共 14 条

[1]

Ahrenkiel R. K., 1993, SEMICONDUCT SEMIMET, V39

[2] SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES [J].