GROWTH AND DOPING OF ZNTE AND ZNSE EPILAYERS WITH METALORGANIC VAPOR-PHASE EPITAXY

被引：52

作者：

WOLF, K

STANZL, H

NAUMOV, A

WAGNER, HP

KUHN, W

HAHN, B

GEBHARDT, W

机构：

[1] Institut für Festkörperphysik, Universität Regensburg, D-93040 Regensburg

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90843-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this work we report on the growth and doping of ZnTe and ZnSe layers with metalorganic vapour phase epitaxy (MOVPE). Low restistive p-type ZnTe was grown by doping with arsenic and phosphorus. Acceptor concentrations of up to 3.5 X 10(17) cm-3 were achieved in the case of phosphorus-doped samples. For the first time nitrogen acceptors in ZnTe were investigated with photoluminescence at various temperatures and under resonant conditions. ZnSe layers were grown with DTBSe and DMZnTEN. The crystalline quality was investigated by high resolution X-ray diffraction. The halfwidths (150-500 arc sec) depend on the degree of relaxation and therefore on the layer thickness. Undoped ZnSe layers show at 2 K a strong recombination of free and bound excitons and a weak donor-acceptor pair luminescence.

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页码：412 / 417

页数：6

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