AUTOMATED HALL PROFILING SYSTEM FOR THE CHARACTERIZATION OF SEMICONDUCTORS AT ROOM AND LIQUID-NITROGEN TEMPERATURES

被引:13
作者
BLIGHT, SR
NICHOLLS, RE
SANGHA, SPS
KIRBY, PB
TEALE, L
HISCOCK, SP
STEWART, CP
机构
来源
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1988年 / 21卷 / 05期
关键词
D O I
10.1088/0022-3735/21/5/011
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:470 / 479
页数:10
相关论文
共 16 条
[1]   AUTOMATIC ELECTROCHEMICAL PROFILING OF HALL-MOBILITY IN SEMICONDUCTORS [J].
AMBRIDGE, T ;
ALLEN, CJ .
ELECTRONICS LETTERS, 1979, 15 (20) :648-650
[2]   ELECTRICAL BEHAVIOR OF GROUP-3 AND GROUP-V IMPLANTED DOPANTS IN SILICON [J].
BARON, R ;
SHIFRIN, GA ;
MARSH, OJ ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3702-&
[3]  
BERRY JA, 1986, SPIE, V659, P115
[4]   DETERMINATION OF DOPING AND MOBILITY PROFILES BY AUTOMATIC ELECTRICAL MEASUREMENTS AND ANODIC-STRIPPING [J].
BOURO, L ;
TSOUKALAS, D .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1987, 20 (05) :541-544
[5]  
CAHEN O, 1970, P EUROP C ION IMPLAN, P192
[6]   SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS [J].
CHANDRA, A ;
WOOD, CEC ;
WOODARD, DW ;
EASTMAN, LF .
SOLID-STATE ELECTRONICS, 1979, 22 (07) :645-650
[7]  
DAVIDSON SM, 1971, 2ND P INT C ION IMPL, P79
[8]   SIMPLE AND RAPID-DETERMINATION OF CARRIER CONCENTRATION AND MOBILITY PROFILES IN GAAS [J].
ESTEVE, J ;
PONSE, F ;
BACHEM, KH .
THIN SOLID FILMS, 1981, 82 (03) :287-292
[9]   DETECTION OF EXCESS CRYSTALLINE AS AND SB IN III-V OXIDE INTERFACES BY RAMAN-SCATTERING [J].
FARROW, RL ;
CHANG, RK ;
MROCZKOWSKI, S ;
POLLAK, FH .
APPLIED PHYSICS LETTERS, 1977, 31 (11) :768-770
[10]   THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J].
PETRITZ, RL .
PHYSICAL REVIEW, 1958, 110 (06) :1254-1262