DEEP STATES IN GLASSY CHALCOGENIDES DERIVE FROM THERMODYNAMIC DEFECTS

被引:14
作者
ABKOWITZ, M
机构
[1] Xerox Corp, Webster, NY, USA, Xerox Corp, Webster, NY, USA
关键词
SEMICONDUCTING FILMS - Amorphous - THERMODYNAMICS;
D O I
10.1016/0022-3093(85)90871-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In typical glassy chalcogenide films xerographic potentials which are controlled by states near midgap have been found to exhibit pronounced hysteresis in response to a step change in temperature. Analysis of the dynamic and temperature-dependent behavior of these potentials establishes that the influential deep states populations N exhibit two key properties of thermodynamic defects namely: N equals N(T) after prolonged annealing at T, and N exhibits temperature-dependent relaxation recovery behavior in response to a temperature step which is clearly associated with physical (i. e. thermostructural) aging.
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页码:1191 / 1194
页数:4
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