ATOMIC-FORCE MICROSCOPY AND RAMAN-SPECTROSCOPY STUDIES ON THE OXIDATION OF CU THIN-FILMS

被引：145

作者：

GONG, YS ^{[1
]}

LEE, CP ^{[1
]}

YANG, CK ^{[1
]}

机构：

[1] NATL TAIWAN INST TECHNOL,DEPT CHEM ENGN,TAIPEI 10672,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 10期

关键词：

D O I：

10.1063/1.359234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The oxidation of sputtering deposited copper thin films has been investigated. Phase identification and surface morphology characterization were performed by x-ray diffraction, Raman spectroscopy, and atomic force microscopy (AFM). The copper film is first oxidized to Cu2O below 300°C and then to CuO at higher temperatures (≥300°C) near the surface of the copper. AFM results show that the as-deposited Cu film contains grains of similar sizes. After heat treatment at 200°C, small grains are observed due to nucleation of the Cu2O phase. Further annealing in air leads to aggregation and growth of the grains whereas the grain boundary of the grains before coalescence is still evident. The Cu2O and CuO phases form alternating layers when the annealing temperature is 400°C. © 1995 American Institute of Physics.

引用

页码：5422 / 5425

页数：4