SELF-INTERSTITIALS AND THERMAL DONOR FORMATION IN SILICON - NEW MEASUREMENTS AND A MODEL FOR THE DEFECTS

被引：57

作者：

NEWMAN, RC

OATES, AS

LIVINGSTON, FM

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 19期

关键词：

D O I：

10.1088/0022-3719/16/19/002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L667 / L674

页数：8

共 25 条

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