SELF-INTERSTITIALS AND THERMAL DONOR FORMATION IN SILICON - NEW MEASUREMENTS AND A MODEL FOR THE DEFECTS

被引：57

作者：

NEWMAN, RC

OATES, AS

LIVINGSTON, FM

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 19期

关键词：

D O I：

10.1088/0022-3719/16/19/002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L667 / L674

页数：8

共 25 条

[11]

HELMREICH D, 1981, SEMICONDUCTOR SILICO, P626

[12] INFRARED SPECTRA OF HEAT TREATMENT CENTERS IN SILICON [J].

HROSTOWSKI, HJ ;

KAISER, RH .

PHYSICAL REVIEW LETTERS, 1958, 1 (06) :199-200

[13] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].

KAISER, W ;

FRISCH, HL ;

REISS, H .

PHYSICAL REVIEW, 1958, 112 (05) :1546-1554

[14] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].

KAISER, W .

PHYSICAL REVIEW, 1957, 105 (06) :1751-1756

[15] OXYGEN-RELATED DONOR STATES IN SILICON [J].

KIMERLING, LC ;

BENTON, JL .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :410-412

[16]

LEROUILLE J, 1981, PHYS STATUS SOLIDI A, V67, P117

[17]

Newman R. C., 1971, Radiation Effects, V8, P189, DOI 10.1080/00337577108231028

[18] RADIATION-ENHANCED DIFFUSION OF OXYGEN IN SILICON AT ROOM-TEMPERATURE [J].

NEWMAN, RC ;

TUCKER, JH ;

LIVINGSTON, FM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (05) :L151-L156

[19] PRECIPITATION OF OXYGEN IN SILICON KINETICS, SOLUBILITY, DIFFUSIVITY AND PARTICLE-SIZE [J].

NEWMAN, RC ;

BINNS, MJ ;

BROWN, WP ;

LIVINGSTON, FM ;

MESSOLORAS, S ;

STEWART, RJ ;

WILKES, JG .

PHYSICA B & C, 1983, 116 (1-3) :264-270

[20] DEFECTS IN SILICON [J].

NEWMAN, RC .

REPORTS ON PROGRESS IN PHYSICS, 1982, 45 (10) :1163-1210

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