RADIATION-ENHANCED DIFFUSION OF OXYGEN IN SILICON AT ROOM-TEMPERATURE

被引:31
作者
NEWMAN, RC
TUCKER, JH
LIVINGSTON, FM
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 05期
关键词
D O I
10.1088/0022-3719/16/5/004
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:L151 / L156
页数:6
相关论文
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