RADIATION-ENHANCED DIFFUSION OF OXYGEN IN SILICON AT ROOM-TEMPERATURE

被引：31

作者：

NEWMAN, RC

TUCKER, JH

LIVINGSTON, FM

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 05期

关键词：

D O I：

10.1088/0022-3719/16/5/004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L151 / L156

页数：6

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