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STUDY OF ELECTRIC-FIELD ENHANCED EMISSION OF DEEP LEVELS USING A NEW EMISSION SPECTROSCOPIC TECHNIQUE
被引:7
作者
:
NGUYEN, TT
论文数:
0
引用数:
0
h-index:
0
NGUYEN, TT
WANG, KL
论文数:
0
引用数:
0
h-index:
0
WANG, KL
LI, GP
论文数:
0
引用数:
0
h-index:
0
LI, GP
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1984年
/ 44卷
/ 02期
关键词
:
D O I
:
10.1063/1.94713
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:211 / 213
页数:3
相关论文
共 7 条
[1]
[Anonymous], UNPUB
[2]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
[J].
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
:3023
-3032
[3]
THE USE OF SPATIALLY-DEPENDENT CARRIER CAPTURE RATES FOR DEEP-LEVEL-DEFECT TRANSIENT STUDIES
[J].
LI, GP
论文数:
0
引用数:
0
h-index:
0
LI, GP
;
WANG, KL
论文数:
0
引用数:
0
h-index:
0
WANG, KL
.
SOLID-STATE ELECTRONICS,
1983,
26
(09)
:825
-833
[4]
A NOVEL TECHNIQUE FOR STUDYING ELECTRIC-FIELD EFFECT OF CARRIER EMISSION FROM A DEEP LEVEL CENTER
[J].
LI, GP
论文数:
0
引用数:
0
h-index:
0
LI, GP
;
WANG, KL
论文数:
0
引用数:
0
h-index:
0
WANG, KL
.
APPLIED PHYSICS LETTERS,
1983,
42
(09)
:838
-840
[5]
EFFECT OF ELECTRIC-FIELD ON DEEP-LEVEL TRANSIENTS IN GAAS AND GAP
[J].
MAKRAMEBEID, S
论文数:
0
引用数:
0
h-index:
0
MAKRAMEBEID, S
.
APPLIED PHYSICS LETTERS,
1980,
37
(05)
:464
-466
[6]
ELECTRIC-FIELD EFFECT ON THE THERMAL EMISSION OF TRAPS IN SEMICONDUCTOR JUNCTIONS
[J].
VINCENT, G
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique de la Matiere, Institut National des Sciences Appliquées de Lyon, 69621 Villeurbanne Cédex, 20, Avenue Albert Einstein
VINCENT, G
;
CHANTRE, A
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique de la Matiere, Institut National des Sciences Appliquées de Lyon, 69621 Villeurbanne Cédex, 20, Avenue Albert Einstein
CHANTRE, A
;
BOIS, D
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique de la Matiere, Institut National des Sciences Appliquées de Lyon, 69621 Villeurbanne Cédex, 20, Avenue Albert Einstein
BOIS, D
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(08)
:5484
-5487
[7]
A SYSTEM FOR MEASURING DEEP-LEVEL SPATIAL CONCENTRATION DISTRIBUTIONS
[J].
WANG, KL
论文数:
0
引用数:
0
h-index:
0
WANG, KL
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(01)
:449
-453
←
1
→
共 7 条
[1]
[Anonymous], UNPUB
[2]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
[J].
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
:3023
-3032
[3]
THE USE OF SPATIALLY-DEPENDENT CARRIER CAPTURE RATES FOR DEEP-LEVEL-DEFECT TRANSIENT STUDIES
[J].
LI, GP
论文数:
0
引用数:
0
h-index:
0
LI, GP
;
WANG, KL
论文数:
0
引用数:
0
h-index:
0
WANG, KL
.
SOLID-STATE ELECTRONICS,
1983,
26
(09)
:825
-833
[4]
A NOVEL TECHNIQUE FOR STUDYING ELECTRIC-FIELD EFFECT OF CARRIER EMISSION FROM A DEEP LEVEL CENTER
[J].
LI, GP
论文数:
0
引用数:
0
h-index:
0
LI, GP
;
WANG, KL
论文数:
0
引用数:
0
h-index:
0
WANG, KL
.
APPLIED PHYSICS LETTERS,
1983,
42
(09)
:838
-840
[5]
EFFECT OF ELECTRIC-FIELD ON DEEP-LEVEL TRANSIENTS IN GAAS AND GAP
[J].
MAKRAMEBEID, S
论文数:
0
引用数:
0
h-index:
0
MAKRAMEBEID, S
.
APPLIED PHYSICS LETTERS,
1980,
37
(05)
:464
-466
[6]
ELECTRIC-FIELD EFFECT ON THE THERMAL EMISSION OF TRAPS IN SEMICONDUCTOR JUNCTIONS
[J].
VINCENT, G
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique de la Matiere, Institut National des Sciences Appliquées de Lyon, 69621 Villeurbanne Cédex, 20, Avenue Albert Einstein
VINCENT, G
;
CHANTRE, A
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique de la Matiere, Institut National des Sciences Appliquées de Lyon, 69621 Villeurbanne Cédex, 20, Avenue Albert Einstein
CHANTRE, A
;
BOIS, D
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique de la Matiere, Institut National des Sciences Appliquées de Lyon, 69621 Villeurbanne Cédex, 20, Avenue Albert Einstein
BOIS, D
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(08)
:5484
-5487
[7]
A SYSTEM FOR MEASURING DEEP-LEVEL SPATIAL CONCENTRATION DISTRIBUTIONS
[J].
WANG, KL
论文数:
0
引用数:
0
h-index:
0
WANG, KL
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(01)
:449
-453
←
1
→