STUDY OF ELECTRIC-FIELD ENHANCED EMISSION OF DEEP LEVELS USING A NEW EMISSION SPECTROSCOPIC TECHNIQUE

被引:7
作者
NGUYEN, TT
WANG, KL
LI, GP
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D O I
10.1063/1.94713
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O59 [应用物理学];
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页码:211 / 213
页数:3
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共 7 条
[1]  
[Anonymous], UNPUB
[2]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[3]   THE USE OF SPATIALLY-DEPENDENT CARRIER CAPTURE RATES FOR DEEP-LEVEL-DEFECT TRANSIENT STUDIES [J].
LI, GP ;
WANG, KL .
SOLID-STATE ELECTRONICS, 1983, 26 (09) :825-833
[4]   A NOVEL TECHNIQUE FOR STUDYING ELECTRIC-FIELD EFFECT OF CARRIER EMISSION FROM A DEEP LEVEL CENTER [J].
LI, GP ;
WANG, KL .
APPLIED PHYSICS LETTERS, 1983, 42 (09) :838-840
[5]   EFFECT OF ELECTRIC-FIELD ON DEEP-LEVEL TRANSIENTS IN GAAS AND GAP [J].
MAKRAMEBEID, S .
APPLIED PHYSICS LETTERS, 1980, 37 (05) :464-466
[6]   ELECTRIC-FIELD EFFECT ON THE THERMAL EMISSION OF TRAPS IN SEMICONDUCTOR JUNCTIONS [J].
VINCENT, G ;
CHANTRE, A ;
BOIS, D .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5484-5487
[7]   A SYSTEM FOR MEASURING DEEP-LEVEL SPATIAL CONCENTRATION DISTRIBUTIONS [J].
WANG, KL .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :449-453