IMPACT IONIZATION INVESTIGATIONS ON ZNSE SCHOTTKY-BARRIER DIODES

[1] ELECTROLUMINESCENCE IN REVERSE-BIASSED ZINC SELENIDE SCHOTTKY DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1363 - +

[2] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2267 - &

[3] IMPACT IONIZATION THRESHOLDS IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (16): : 2573 - 2585

[4] The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J]. PHYSICAL REVIEW, 1931, 38 (01): : 45 - 56

[5] GARTNER WW, 1954, PHYS REV, V116, P84

[6] HARTMANN H, 1974, KRISTALL TECHNIK, V7, P743

[7] HOWARD NR, 1962, J ELECTRON CONTR, V13, P537

[8] ELECTRON SCATTERING BY PAIR PRODUCTION IN SILICON [J]. PHYSICAL REVIEW, 1967, 159 (03): : 624 - &

[9] REFRACTIVE INDEX OF ZNSE, ZNTE, + CDTE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 539 - &

[10] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[1] ELECTROLUMINESCENCE IN REVERSE-BIASSED ZINC SELENIDE SCHOTTKY DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1363 - +

[2] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2267 - &

[3] IMPACT IONIZATION THRESHOLDS IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (16): : 2573 - 2585

[4] The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J]. PHYSICAL REVIEW, 1931, 38 (01): : 45 - 56

[5] GARTNER WW, 1954, PHYS REV, V116, P84

[6] HARTMANN H, 1974, KRISTALL TECHNIK, V7, P743

[7] HOWARD NR, 1962, J ELECTRON CONTR, V13, P537

[8] ELECTRON SCATTERING BY PAIR PRODUCTION IN SILICON [J]. PHYSICAL REVIEW, 1967, 159 (03): : 624 - &

[9] REFRACTIVE INDEX OF ZNSE, ZNTE, + CDTE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 539 - &

[10] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884