VOLUME LOW-FREQUENCY DISPERSION (LFD) IN HIGH-RESISTIVITY EPSILON-GASE

被引：10

作者：

ANIS, MK ^{[1
]}

HASHMI, RA ^{[1
]}

SHAHRUKH, MU ^{[1
]}

SAHBA, M ^{[1
]}

机构：

[1] UNIV KARACHI,DEPT PHYS,CONDENSED MATTER RES LAB,KARACHI 75270,PAKISTAN

来源：

PHYSICA B | 1992年 / 179卷 / 04期

关键词：

D O I：

10.1016/0921-4526(92)90627-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Dielectric measurements on high resistivity p-type epsilon-GaSe single crystals both parallel and perpendicular to the c-axis within Ag contacts were made in the frequency range 10(-3)-10(4) Hz and the temperature range 300-500 K. The complex susceptibility shows evidence of volume LFD at higher frequencies, with even more dispersive LFD at low frequencies and low temperatures, which eventually goes over into negative capacitance at higher temperatures, suggesting a parallel volume process. The dielectric data are isotropic. while different activation energies are seen in the parallel and perpendicular directions.

引用

页码：278 / 284

页数：7