MOLYBDENUM NITRIDE FILM FORMATION

[1] BELORUCHEV LV, 1968, THEMICHESKAYA OBRABO, P67

[2] MO GATE TETRODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1302 - 1307

[3] REFRACTORY METAL SILICON DEVICE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1105 - +

[4] BROWN DM, 1966, J ELECTROCHEM SOC, V115, P874

[5] PERFORMANCE OF REFRACTORY-METAL MULTILEVEL INTERCONNECTION SYSTEM [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (01) : 54 - &

[6] GAYDON AG, 1955, DISSOCIATION ENERGIE

[7] Hagg G, 1930, Z PHYS CHEM B-CHEM E, V7, P339

[8] SUPPRESSION OF MOBILE ION RELATED INSTABILITY IN MO-GATE MOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 175 - 179

[9] OKABAYASHI H, 1981, EL SOC EXT ABSTR, P753

[10] METAL-NITRIDE-OXIDE-SILICON FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED GATES [J]. SOLID-STATE ELECTRONICS, 1968, 11 (07) : 653 - +

[1] BELORUCHEV LV, 1968, THEMICHESKAYA OBRABO, P67

[2] MO GATE TETRODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1302 - 1307

[3] REFRACTORY METAL SILICON DEVICE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1105 - +

[4] BROWN DM, 1966, J ELECTROCHEM SOC, V115, P874

[5] PERFORMANCE OF REFRACTORY-METAL MULTILEVEL INTERCONNECTION SYSTEM [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (01) : 54 - &

[6] GAYDON AG, 1955, DISSOCIATION ENERGIE

[7] Hagg G, 1930, Z PHYS CHEM B-CHEM E, V7, P339

[8] SUPPRESSION OF MOBILE ION RELATED INSTABILITY IN MO-GATE MOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 175 - 179

[9] OKABAYASHI H, 1981, EL SOC EXT ABSTR, P753

[10] METAL-NITRIDE-OXIDE-SILICON FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED GATES [J]. SOLID-STATE ELECTRONICS, 1968, 11 (07) : 653 - +