INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS

[1] AIGRAIN P, 1961, SELECTED CONSTANTS R

[2] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[3] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[4] ANDERSON RL, 1960, THESIS SYRACUSE U

[5] ANDERSON RL, 1960, IBM J RES DEV, V4, P280

[6] Atalla M. M., 1962, IEEE T ELECTRON DEV, V9, P507

[7] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[8] BARDSLEY W, 1960, PROGRESS SEMICONDUCT, V4, P155

[9] FANG FF, 1962, IRE ELECTRON DEVICE

[10] FANG FF, 1963, JUL IEEE SOL STAT DE

[1] AIGRAIN P, 1961, SELECTED CONSTANTS R

[2] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[3] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[4] ANDERSON RL, 1960, THESIS SYRACUSE U

[5] ANDERSON RL, 1960, IBM J RES DEV, V4, P280

[6] Atalla M. M., 1962, IEEE T ELECTRON DEV, V9, P507

[7] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[8] BARDSLEY W, 1960, PROGRESS SEMICONDUCT, V4, P155

[9] FANG FF, 1962, IRE ELECTRON DEVICE

[10] FANG FF, 1963, JUL IEEE SOL STAT DE