LONG-RANGE ORDER IN THICK, UNSTRAINED SI0.5GE0.5 EPITAXIAL LAYERS

被引：95

作者：

LEGOUES, FK

KESAN, VP

IYER, SS

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 64卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.64.40

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We observe, for the first time, long-range order in thick, unstrained SiGe alloys, with and without boron doping. This ordering occurs along the four equivalent 111 directions. The ordered domains are randomly shaped, and corresponds to alternating double layers of Si and Ge. Bond energy arguments are used to explain the formation of this new phase. © 1990 The American Physical Society.

引用

页码：40 / 43

页数：4

共 13 条

[1] STRAINED SI/GE SUPERLATTICES - STRUCTURAL STABILITY, GROWTH, AND ELECTRONIC-PROPERTIES
CIRACI, S
BATRA, IP
[J]. PHYSICAL REVIEW B, 1988, 38 (03): : 1835 - 1848
[2] GENSSER U, IN PRESS J VAC SCI T
[3] HANSEN M, 1958, CONSTITUTION BINARY, P774
[4] THERMAL RELAXATION OF PSEUDOMORPHIC SI-GE SUPERLATTICES BY ENHANCED DIFFUSION AND DISLOCATION MULTIPLICATION
IYER, SS
LEGOUES, FK
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) : 4693 - 4698
[5] LONG-RANGE ORDER IN ALXGA1-XAS
KUAN, TS
KUECH, TF
WANG, WI
WILKIE, EL
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (03) : 201 - 204
[6] KUAN TS, 1989, 47TH P ANN M EL MICR, P580
[7] KUAN TS, 1989, ENCY PHYSICAL SCI TE, P521
[8] KUAN TS, COMMUNICATION
[9] STRAIN-INDUCED ORDERING IN SILICON-GERMANIUM ALLOYS
LITTLEWOOD, PB
[J]. PHYSICAL REVIEW B, 1986, 34 (02): : 1363 - 1366
[10] ORDERING IN SI1-XGEX CRYSTALS
LOCKWOOD, DJ
RAJAN, K
FENTON, EW
BARIBEAU, JM
DENHOFF, MW
[J]. SOLID STATE COMMUNICATIONS, 1987, 61 (08) : 465 - 467

← 1 2 →