EXPERIMENTAL-STUDY OF THE DOUBLE KINK FORMATION KINETICS AND KINK MOBILITY ON THE DISLOCATION LINE IN SI SINGLE-CRYSTALS

被引：43

作者：

FARBER, BY

IUNIN, YL

NIKITENKO, VI

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1986年 / 97卷 / 02期

关键词：

D O I：

10.1002/pssa.2210970219

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：469 / 478

页数：10

共 29 条

[1] NUCLEATION THEORY OF OVERDAMPED SOLITON MOTION
BUTTIKER, M
LANDAUER, R
[J]. PHYSICAL REVIEW A, 1981, 23 (03): : 1397 - 1410
[2] THEORY OF DISLOCATION MOBILITY IN SEMICONDUCTORS
CELLI, V
THOMSON, R
KABLER, M
NINOMIYA, T
[J]. PHYSICAL REVIEW, 1963, 131 (01): : 58 - &
[3] Erofeev V. N., 1971, Kristallografiya, V16, P190
[4] EROFEEV VN, 1971, FIZ TVERD TELA+, V13, P116
[5] Erofev V. N., 1971, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V60, P1780
[6] CHANGE OF DISLOCATION MOBILITY CHARACTERISTICS IN SILICON SINGLE-CRYSTALS AT ELEVATED-TEMPERATURES
FARBER, BY
NIKITENKO, VI
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1982, 73 (01): : K141 - K144
[7] MEASUREMENTS OF THE DISLOCATION VELOCITIES IN SILICON
GEORGE, A
[J]. JOURNAL DE PHYSIQUE, 1979, 40 : 133 - 137
[8] GEORGE A, 1972, PHYS STATUS SOLIDI B, V53, P483, DOI 10.1002/pssb.2220530209
[9] INTERNAL-FRICTION IN INTRINSIC AND N-TYPE GERMANIUM AND SILICON
GERK, AP
WILLIAMS, WS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3585 - 3606
[10] Hirsch P.B., 1981, I PHYS C SER, V60, P29