CHANGE OF DISLOCATION MOBILITY CHARACTERISTICS IN SILICON SINGLE-CRYSTALS AT ELEVATED-TEMPERATURES

[1] THEORY OF DISLOCATION MOBILITY IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1963, 131 (01): : 58 - &

[2] EROFEEV VN, 1971, FIZ TVERD TELA+, V13, P116

[3] EFFECT OF IMPURITIES ON INDIVIDUAL DISLOCATION MOBILITY IN SILICON [J]. PHYSICA STATUS SOLIDI, 1969, 35 (01): : 79 - +

[4] Erofev V. N., 1971, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V60, P1780

[5] FARBER BY, 1981, FIZ TVERD TELA+, V23, P2192

[6] MEASUREMENTS OF THE DISLOCATION VELOCITIES IN SILICON [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 133 - 137

[7] GEORGE A, 1972, PHYS STATUS SOLIDI B, V53, P483, DOI 10.1002/pssb.2220530209

[8] Hirth J.P., 1982, THEORY DISLOCATIONS

[9] DISLOCATION VELOCITIES, DISLOCATION DENSITIES, AND PLASTIC FLOW IN LITHIUM FLUORIDE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (02) : 129 - 144

[10] DISLOCATION VELOCITIES AND ELECTRONIC DOPING IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) : 4318 - 4325

[1] THEORY OF DISLOCATION MOBILITY IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1963, 131 (01): : 58 - &

[2] EROFEEV VN, 1971, FIZ TVERD TELA+, V13, P116

[3] EFFECT OF IMPURITIES ON INDIVIDUAL DISLOCATION MOBILITY IN SILICON [J]. PHYSICA STATUS SOLIDI, 1969, 35 (01): : 79 - +

[4] Erofev V. N., 1971, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V60, P1780

[5] FARBER BY, 1981, FIZ TVERD TELA+, V23, P2192

[6] MEASUREMENTS OF THE DISLOCATION VELOCITIES IN SILICON [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 133 - 137

[7] GEORGE A, 1972, PHYS STATUS SOLIDI B, V53, P483, DOI 10.1002/pssb.2220530209

[8] Hirth J.P., 1982, THEORY DISLOCATIONS

[9] DISLOCATION VELOCITIES, DISLOCATION DENSITIES, AND PLASTIC FLOW IN LITHIUM FLUORIDE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (02) : 129 - 144

[10] DISLOCATION VELOCITIES AND ELECTRONIC DOPING IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) : 4318 - 4325