DISLOCATION VELOCITIES AND ELECTRONIC DOPING IN SILICON

被引：43

作者：

KULKARNI, SB

WILLIAMS, WS

机构：

[1] UNIV ILLINOIS,DEPT MET,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[4] UNIV ILLINOIS,DEPT CERAMIC ENGN,URBANA,IL 61801

来源：

关键词：

D O I：

10.1063/1.322433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4318 / 4325

页数：8

共 33 条

[1] AUGER EFFECT IN SEMICONDUCTORS
BEATTIE, AR
LANDSBERG, PT
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29
[2] AUGER-RECOMBINATION IN SI
BECK, JD
CONRADT, R
[J]. SOLID STATE COMMUNICATIONS, 1973, 13 (01) : 93 - 95
[3] Burns K.M, 1963, PHYSIOTHERAPY, V49, P182
[4] THEORY OF DISLOCATION MOBILITY IN SEMICONDUCTORS
CELLI, V
THOMSON, R
KABLER, M
NINOMIYA, T
[J]. PHYSICAL REVIEW, 1963, 131 (01): : 58 - &
[5] ELECTRONIC STATES ON DISLOCATIONS IN SEMICONDUCTORS
CELLI, V
GOLD, A
THOMSON, R
[J]. PHYSICAL REVIEW LETTERS, 1962, 8 (03) : 96 - &
[6] EFFECTS OF DISLOCATIONS ON MOBILITIES IN SEMICONDUCTORS
DEXTER, DL
SEITZ, F
[J]. PHYSICAL REVIEW, 1952, 86 (06): : 964 - 965
[7] DORN JE, 1964, T METALL SOC AIME, V230, P1052
[8] MOBILITY OF HOLES IN DEFORMED SEMICONDUCTORS
DUSTER, F
LABUSCH, R
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 60 (01): : 161 - 168
[9] EFFECT OF IMPURITIES ON INDIVIDUAL DISLOCATION MOBILITY IN SILICON
EROFEEV, VN
NIKITENKO, VI
OSVENSKII, VB
[J]. PHYSICA STATUS SOLIDI, 1969, 35 (01): : 79 - +
[10] CHEMICAL INFLUENCE OF HOLES AND ELECTRONS ON DISLOCATION VELOCITY IN SEMICONDUCTORS
FRISCH, HL
PATEL, JR
[J]. PHYSICAL REVIEW LETTERS, 1967, 18 (19) : 784 - &