DIRECT ANALYSIS OF CONTAMINATION IN SUBMICRON CONTACT HOLES BY THERMAL-DESORPTION SPECTROSCOPY

被引：4

作者：

AOKI, H ^{[1
]}

TERAOKA, Y ^{[1
]}

IKAWA, E ^{[1
]}

KIKKAWA, T ^{[1
]}

NISHIYAMA, I ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR RES LABS,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.579441

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thermal desorption spectroscopy (TDS) has been applied to detect contamination, produced in deep-submicron contact holes during plasma etching. A1F and other Al-containing fragments were observed as constituents of the contamination. The contamination is found to be accumulated in the holes, depending on an overetch time, acting as an inhibitor against achieving sufficiently low contact resistance. The effects of cleaning by Ar+ ion sputtering after contact-hole fabrication are also investigated. The sputtering improves the contact resistance significantly. The sharp TDS peaks of AlF and AlC clearly decreased in good relation to the improvement in the contact resistance. The TDS method has proven to be an effective tool in evaluating contamination in the submicron contact holes. © 1995, American Vacuum Society. All rights reserved.

引用

页码：42 / 46

页数：5

共 6 条

[1]

AOKI H, 1991, JPN J APPL PHYS, V7, P1567

[2]

AOKI H, 1991, UNPUB 1991 P SOL STA, P562

[3] ADSORPTION OF CHLORINE ON CLEAN AND ON OXYGEN PREEXPOSED AL(111) [J].

BERMUDEZ, VM ;

GLASS, AS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :1961-1966

[4] ANNEALING AND OXIDATION EFFECTS AFTER CF4/H-2 DRY ETCHING FOR DAMAGE RECOVERY [J].

IKAWA, E ;

ENDO, N ;

TAJIMA, M ;

KUROGI, Y .

SURFACE SCIENCE, 1986, 172 (03) :763-772

[5] SELECTIVE ETCHING OF SIO2 RELATIVE TO SI BY PLASMA REACTIVE SPUTTER ETCHING [J].

MATSUO, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (02) :587-594

[6]

ZHDANOV VP, 1991, SURF SCI REP, V12, P188

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