AN OPTICAL AND X-RAY TOPOGRAPHIC STUDY OF GIANT SCREW DISLOCATIONS IN SILICON-CARBIDE

被引:36
作者
KRISHNA, P
JIANG, SS
LANG, AR
机构
关键词
D O I
10.1016/0022-0248(85)90042-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
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页码:41 / 56
页数:16
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共 25 条
[21]   THE INFLUENCE OF STRESS ON SPIRAL GROWTH [J].
VANDERHOEK, B ;
VANDEREERDEN, JP ;
BENNEMA, P ;
SUNAGAWA, I .
JOURNAL OF CRYSTAL GROWTH, 1982, 58 (02) :365-380
[22]  
Varma AR., 1953, CRYSTAL GROWTH DISLO
[23]  
VERMA AR, 1951, PHILOS MAG, V42, P1005
[24]   STUDY OF POLYTYPISM IN SILICON CARBIDE BY X-RAY DIFFRACTION TOPOGRAPHY [J].
WALLACE, CA .
ZEITSCHRIFT FUR KRISTALLOGRAPHIE KRISTALLGEOMETRIE KRISTALLPHYSIK KRISTALLCHEMIE, 1968, 126 (5-6) :444-&
[25]   A DISLOCATION AT A FREE SURFACE [J].
YOFFE, EH .
PHILOSOPHICAL MAGAZINE, 1961, 6 (69) :1147-1155