CRITICAL STRESS IN SILICON BRITTLE-FRACTURE, AND EFFECT OF ION-IMPLANTATION AND OTHER SURFACE TREATMENTS

[1] Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443

[2] TENSILE TESTS ON SILICON WHISKERS [J]. ACTA METALLURGICA, 1955, 3 (04): : 414 - 415

[3] Hu S.-J., UNPUB

[4] Hu S.M., 1977, US Patent, Patent No. [US4053335 A, 4053335]

[5] EFFECTS OF ION-IMPLANTATION ON SUBSTRATE HARDENING AND FILM STRESS REDUCTION AND THEIR EFFECT ON YIELD OF BIPOLAR-TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3259 - 3265

[6] DEFECTS IN SILICON SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 17 - 31

[7] LAWRENCE JE, 1975, Patent No. 3905162

[8] MASTERS BJ, 1971, ION IMPLANTATION, P81

[9] METZ EJ, 1965, J ELECTROCHEM SOC, V112, P420

[10] DEFORMATION AND FRACTURE OF SMALL SILICON CRYSTALS [J]. ACTA METALLURGICA, 1957, 5 (04): : 181 - 191

[1] Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443

[2] TENSILE TESTS ON SILICON WHISKERS [J]. ACTA METALLURGICA, 1955, 3 (04): : 414 - 415

[3] Hu S.-J., UNPUB

[4] Hu S.M., 1977, US Patent, Patent No. [US4053335 A, 4053335]

[5] EFFECTS OF ION-IMPLANTATION ON SUBSTRATE HARDENING AND FILM STRESS REDUCTION AND THEIR EFFECT ON YIELD OF BIPOLAR-TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3259 - 3265

[6] DEFECTS IN SILICON SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 17 - 31

[7] LAWRENCE JE, 1975, Patent No. 3905162

[8] MASTERS BJ, 1971, ION IMPLANTATION, P81

[9] METZ EJ, 1965, J ELECTROCHEM SOC, V112, P420

[10] DEFORMATION AND FRACTURE OF SMALL SILICON CRYSTALS [J]. ACTA METALLURGICA, 1957, 5 (04): : 181 - 191