CHANNEL BUFFER (SUBSTRATE) INTERFACE PHENOMENA IN GAAS-MESFETS FABRICATED BY MOLECULAR-BEAM EPITAXY

被引：9

作者：

SHENAI, K ^{[1
]}

DUTTON, RW ^{[1
]}

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 05期

关键词：

D O I：

10.1109/16.2501

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：590 / 603

页数：14

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