REDISTRIBUTION OF EXCESS SI IN CHEMICAL VAPOR-DEPOSITED WSIX FILMS UPON POSTDEPOSITION ANNEALING

被引：23

作者：

KOTTKE, M ^{[1
]}

PINTCHOVSKI, F ^{[1
]}

WHITE, TR ^{[1
]}

TOBIN, PJ ^{[1
]}

机构：

[1] MOTOROLA INC,ADV PROD RES & DEV LAB,AUSTIN,TX 78721

来源：

关键词：

D O I：

10.1063/1.337067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2835 / 2841

页数：7

共 23 条

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[3] BRORS DL, 1983, SOLID STATE TECHNOL, V26, P183
[4] BRORS DL, 1984, 9TH P INT C CHEM VAP, P275
[5] CHALMERS B, 1959, PHYSICAL METALLURGY
[6] CHICOTKA SK, 1985, MAY WORKSH REFR MET
[7] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371
[8] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES
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ISHAQ, MH
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WHITE, FR
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 482 - 489
[9] OXIDATION PHENOMENA OF POLYSILICON TUNGSTEN SILICIDE STRUCTURES
HSIEH, N
NESBIT, L
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (01) : 201 - 205
[10] INOUE S, 1985, MAY WORKSH REFR MET