OXIDATION PHENOMENA OF POLYSILICON TUNGSTEN SILICIDE STRUCTURES

被引：26

作者：

HSIEH, N ^{[1
]}

NESBIT, L ^{[1
]}

机构：

[1] IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05452

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 01期

关键词：

D O I：

10.1149/1.2115527

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：201 / 205

页数：5

共 16 条

[1] THE SUPERSATURATION AND PRECIPITATION OF VACANCIES DURING DIFFUSION [J].

BALLUFFI, RW .

ACTA METALLURGICA, 1954, 2 (02) :194-&

[2] THE EFFECT OF PRESSURE UPON VOID FORMATION IN DIFFUSION COUPLES [J].

BARNES, RS ;

MAZEY, DJ .

ACTA METALLURGICA, 1958, 6 (01) :1-7

[3] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].

CROWDER, BL ;

ZIRINSKY, S .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :291-293

[4]

CROWDER BL, COMMUNICATION

[5] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J].

GEIPEL, HJ ;

HSIEH, N ;

ISHAQ, MH ;

KOBURGER, CW ;

WHITE, FR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1417-1424

[6]

HSIEH N, 1980, ELECTROCHEMICAL SOC, V80, P425

[7] PROPERTIES OF SPUTTERED TUNGSTEN SILICIDE FOR MOS INTEGRATED-CIRCUIT APPLICATIONS [J].

MOHAMMADI, F ;

SARASWAT, KC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :450-454

[8] KINETICS OF THE THERMAL-OXIDATION OF WSI2 [J].

MOHAMMADI, F ;

SARASWAT, KC ;

MEINDL, JD .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :529-531

[9] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

MURARKA, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792

[10]

RESNICK R, 1957, T AM I MIN MET ENG, V209, P87

← 1 2 →