STOICHIOMETRIC SHIFTS IN COSPUTTERED REFRACTORY SILICIDE FILMS DURING SUBSEQUENT HEAT-TREATMENT

被引：9

作者：

BHANDIA, AS ^{[1
]}

机构：

[1] NATL SEMICOND CORP,SANTA CLARA,CA 95051

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 04期

关键词：

D O I：

10.1116/1.582876

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：766 / 770

页数：5

共 9 条

[1] BAUMANN SM, 1984, WORKSHOP REFRACTORY
[2] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY
CHOW, TP
STECKL, AJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1480 - 1497
[3] CHU W, 1984, J VAC SCI TECHNOL B, V2
[4] HERMAN MH, 1984, WORKSHOP REFRACTORY
[5] OXIDATION OF TANTALUM DISILICIDE ON POLYCRYSTALLINE SILICON
MURARKA, SP
FRASER, DB
LINDENBERGER, WS
SINHA, AK
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3241 - 3245
[6] MURARKA SP, 1983, SILICIDE VLSI APPLIC
[7] THERMAL-WAVE MEASUREMENTS AND MONITORING OF TASIX SILICIDE FILM PROPERTIES
SMITH, WL
OPSAL, J
ROSENCWAIG, A
STIMMELL, JB
ALLISON, JC
BHANDIA, AS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 710 - 713
[8] STIMMELL JB, UNPUB THIN SOLID FIL
[9] PROPERTIES OF TUNGSTEN SILICIDE FILM ON POLYCRYSTALLINE SILICON
TSAI, MY
DHEURLE, FM
PETERSSON, CS
JOHNSON, RW
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5350 - 5355