ACTIVATION-ENERGY DETERMINATION FROM LOW-TEMPERATURE CV DISPERSION

The response of the semiconductor device at low temperatures to changes in the voltage across the depletion region is limited by the dielectric relaxation time of the majority carriers in the bulk region. This results in a dispersion of the CV curves at low temperatures [1]. In this paper, we report a study of the dispersion seen in the accumulation and depletion regions of the C-V curve in n- and p-channel MOS transistors as well as in reverse biased one-sided abrupt junctions. From the admittance measured as a function of temperature and frequency the dopant energy level is determined. The values of the activation energy measured using the diodes agree well with the corresponding values obtained using MOS devices.