THE INTERACTION OF METHYL-CHLORIDE AND SI(100)-2X1

被引：30

作者：

BROWN, KA ^{[1
]}

HO, W ^{[1
]}

机构：

[1] CORNELL UNIV,CTR MAT SCI,ITHACA,NY 14853

来源：

SURFACE SCIENCE | 1995年 / 338卷 / 1-3期

关键词：

CHEMICAL VAPOR DEPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; LOW INDEX SINGLE CRYSTAL SURFACES; SILICON; THERMAL DESORPTION SPECTROSCOPY; VIBRATIONS OF ADSORBED MOLECULES;

D O I：

10.1016/0039-6028(95)00568-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The interaction of methyl chloride with Si(100) has been studied with electron energy loss spectroscopy (EELS), Auger electron spectroscopy (AES), and temperature programmed desorption (TPD). Dissociative adsorption occurs with near unity sticking probability to form adsorbed CH3 and Cl at less than or equal to 300 K. Molecularly adsorbed species are also present at < 100 K. The sticking coefficient is reduced at higher surface temperatures and the possibility of a precursor is discussed. Moderate exposures (100 L) at substrate temperatures above 500 K result in a carbon layer possessing C-C single bonds. In addition, no chlorine is observed on the surface for exposure temperatures greater than or equal to 700 K, making methyl chloride a promising candidate for carbon film growth.

引用

页码：111 / 116

页数：6

共 18 条

[1]

BIENER J, 1993, SURF SCI LETT, V291, P725

[2]

BOZACK MJ, 1986, SURF SCI, V177, P933

[3] STUDIES OF SIC FORMATION ON SI (100) BY CHEMICAL VAPOR-DEPOSITION [J].