VERY SMOOTH ALGAAS-GAAS QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：9

作者：

DUPUIS, RD ^{[1
]}

NEFF, JG ^{[1
]}

PINZONE, CJ ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT ELECT & COMP ENGN,AUSTIN,TX 78712

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(92)90517-M

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report here the low-pressure metalorganic chemical vapor deposition growth of AlGaAs-GaAs quantum well heterostructures having low-temperature (4.2 K) photoluminescence spectra with full width at half-maximum (FWHM) values ranging from approximately 6 to 4 meV for quantum wells having 6-28 monolayer (ML) widths, respectively. These linewidths are compared to those measured for quantum wells grown by molecular beam epitaxy, flow-rate modulation epitaxy, and atomic layer epitaxy. We find that the FWHM values for the thinnest quantum wells grown in the present study (approximately 6 ML) are equal to or narrower than those observed for comparable structures produced by other technologies.

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收藏

页码：558 / 564

页数：7

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