OH-RELATED CAPACITANCE-VOLTAGE RECOVERY EFFECT IN MOS CAPACITORS PASSIVATED BY PBO-B2O3-SIO2-GEO2 GLASSES .5. THE EFFECTS OF BI2O3 CONTENT

被引：10

作者：

KOBAYASHI, K

机构：

[1] Toshiba ULSI Research and Development Center, Kawasaki

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1995年 / 14卷 / 01期

关键词：

D O I：

10.1007/BF02565268

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：6 / 8

页数：3

共 13 条

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[2]

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[5] VISCOSITY POINTS AND OH ABSORPTION REMOVAL FOR ZNO-B2O3-PBO-SIO2 PASSIVATION GLASSES [J].

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[6]

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[7] WATER-RELATED CAPACITANCE-VOLTAGE RECOVERY EFFECT IN LOW-TEMPERATURE-ANNEALED CHEMICAL VAPOR-DEPOSITED PHOSPHOSILICATE (P-GLASS) FILMS [J].

LI, SC ;

MURARKA, SP ;

GUO, XS ;

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JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) :2947-2950

[8] FABRICATION OF LOW-RESISTANCE POLYSILICON VIA PLUGS IN BOROPHOSPHOSILICATE GLASS [J].

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LOSEE, DL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (10) :2640-2643

[9] PROPERTIES OF BOROPHOSPHOSILICATE GLASS-FILMS DEPOSITED BY DIFFERENT CHEMICAL VAPOR-DEPOSITION TECHNIQUES [J].

ROJAS, S ;

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[10]

RULLER JA, 1992, PHYS CHEM GLASSES, V33, P177

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