FABRICATION OF LOW-RESISTANCE POLYSILICON VIA PLUGS IN BOROPHOSPHOSILICATE GLASS

被引：30

作者：

RALEY, NF

LOSEE, DL

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 10期

关键词：

D O I：

10.1149/1.2095397

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2640 / 2643

页数：4

共 16 条

[1] AL/SIO2/WSI2/SI DOUBLE-LEVEL METALLIZATION FOR CHARGE-COUPLED-DEVICE IMAGERS [J].

BABBAR, HL ;

ANAGNOSTOPOULOS, CN ;

FISCHER, JR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06) :1645-1649

[2] SELECTIVE CVD TUNGSTEN VIA PLUGS FOR MULTILEVEL METALLIZATION [J].

BROWN, DM ;

GOROWITZ, B ;

PIACENTE, P ;

SAIA, R ;

WILSON, R ;

WOODRUFF, D .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) :55-57

[3] DETERMINING SPECIFIC CONTACT RESISTIVITY FROM CONTACT END RESISTANCE MEASUREMENTS [J].

CHERN, JGJ ;

OLDHAM, WG .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) :178-180

[4] A 1/2-IN CCD IMAGE SENSOR OVERLAID WITH A HYDROGENATED AMORPHOUS-SILICON [J].

CHIKAMURA, T ;

KOMEDA, T ;

ISHIKO, D ;

YOSHINO, M ;

NAKAYAMA, M ;

YANO, K ;

AOKI, Y ;

UENO, A ;

YAMADA, T ;

ISHIHARA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (08) :1495-1498

[5] EMITTER RESISTANCE OF ARSENIC-DOPED AND PHOSPHORUS-DOPED POLYSILICON EMITTER TRANSISTORS [J].

CHOR, EF ;

ASHBURN, P ;

BRUNNSCHWEILER, A .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) :516-518

[6]

COWHER ME, 1972, J ELCHEM SO, V119, P1566

[7]

GEORGIOU GE, 1987, TUNGSTEN OTHER REFRA, V2, P227

[8] PLANAR DEPOSITION OF ALUMINUM BY RF-DC SPUTTERING WITH RF BIAS [J].

HOMMA, Y ;

TSUNEKAWA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) :1466-1472

[9] FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON [J].

KOOI, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) :1383-1381

[10] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN AND ALUMINUM FOR VLSI APPLICATIONS [J].

LEVY, RA ;

GREEN, ML .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (02) :C37-C49

← 1 2 →