SELECTIVE CVD TUNGSTEN VIA PLUGS FOR MULTILEVEL METALLIZATION

被引：12

作者：

BROWN, DM

GOROWITZ, B

PIACENTE, P

SAIA, R

WILSON, R

WOODRUFF, D

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 02期

关键词：

D O I：

10.1109/EDL.1987.26550

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：55 / 57

页数：3

共 14 条

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[3]

BROWN DM, 1983, DEC IEDM LOS ANG, P66

[4] CONTRAST ENHANCED PHOTORESISTS - PROCESSING AND MODELING [J].

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WEST, PR .

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[5] MO-TIW CONTACT FOR VLSI APPLICATIONS [J].

KIM, MJ ;

BROWN, DM ;

COHEN, SS ;

PIACENTE, P ;

GOROWITZ, B .

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[6]

MORIYA T, 1983, DEC P IEDEM83 WASH, P550

[7]

SAIA RJ, 1986, OCT EL SOC M SAN DIE, V86, P435

[8]

SHAW JM, 1970, RCA REV, V31, P306

[9]

SHAW JM, 1969, OCT P EL SOC M DETR

[10]

WHITE LK, 1982, OCT KOD MICR SEM

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