MO-TIW CONTACT FOR VLSI APPLICATIONS

被引：10

作者：

KIM, MJ

BROWN, DM

COHEN, SS

PIACENTE, P

GOROWITZ, B

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 07期

关键词：

D O I：

10.1109/T-ED.1985.22119

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1328 / 1333

页数：6

相关论文

共 27 条

[1] TITANIUM-TUNGSTEN CONTACTS TO SI - THE EFFECTS OF ALLOYING ON SCHOTTKY CONTACT AND ON SILICIDE FORMATION
BABCOCK, SE
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6898 - 6905
[2] BALDYREV VP, 1977, SOV PHYS SEMICOND, V11, P709
[3] ELECTROMIGRATION IN THIN AL FILMS
BLECH, IA
MEIERAN, ES
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 485 - &
[4] GLASS SOURCE B DIFFUSION IN SI AND SIO2
BROWN, DM
KENNICOTT, PR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 293 - +
[5] P-CHANNEL REFRACTORY METAL SELF-REGISTERED MOSFET
BROWN, DM
CADY, WR
SPRAGUE, JW
SALVAGNI, PJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 931 - &
[6] MO GATE TETRODE
BROWN, DM
CONNERY, RJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1302 - 1307
[7] DIRECT W-TI CONTACTS TO SILICON
COHEN, SS
KIM, MJ
GOROWITZ, B
SAIA, R
MCNELLY, TF
TODD, G
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 414 - 416
[8] PLATINUM SILICIDE OHMIC CONTACTS TO SHALLOW JUNCTIONS IN SILICON
COHEN, SS
PIACENTE, PA
GILDENBLAT, G
BROWN, DM
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 8856 - 8862
[9] d'Heurle F. M., 1978, THIN FILMS INTERDIFF
[10] PERFORMANCE OF REFRACTORY-METAL MULTILEVEL INTERCONNECTION SYSTEM
ENGELER, WE
BROWN, DM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (01) : 54 - &