DIRECT W-TI CONTACTS TO SILICON

被引：14

作者：

COHEN, SS ^{[1
]}

KIM, MJ ^{[1
]}

GOROWITZ, B ^{[1
]}

SAIA, R ^{[1
]}

MCNELLY, TF ^{[1
]}

TODD, G ^{[1
]}

机构：

[1] GE,INTERSIL,CUPERTINO,CA 95014

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：414 / 416

页数：3

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