Texture-induced asymmetric reactions in TiN/A1-Cu/TiN

Thermally induced reactions in TiN/Al-Cu/TiN have been investigated. It is observed that the amount of the reactions is different at the two interfaces between Al-Cu and TiN. While there is minimal reaction between Al-Cu and the TiN overlayer, the reaction between Al-Cu and the TiN underlayer increases the sheet resistance of Al-Cu by as much as 15%. It is further shown that the asymmetric reactions are most likely caused by the different degree of (111) texture of TiN grown on amorphous SiO2 and textured, polycrystalline Al-Cu. (C) 1995 American Institute of Physics.