HIGH-RESOLUTION DEPTH PROFILING OF NONCONDUCTING SAMPLES WITH SNMS

被引：16

作者：

BOCK, W

KOPNARSKI, M

OECHSNER, H

机构：

[1] UNIV KAISERSLAUTERN,FACHBEREICH PHYS,D-67663 KAISERSLAUTERN,GERMANY

[2] UNIV KAISERSLAUTERN,INST OBERFLACHEN & SCHICHTANALYT,D-67663 KAISERSLAUTERN,GERMANY

来源：

FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1995年 / 353卷 / 5-8期

关键词：

D O I：

10.1007/BF00321312

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Beat-like signal modulations in sputter depth profiles of multilayer structures are shown to enable an estimation and the optimization of the homogeneity of the sputter erosion process. Using W-Si multilayer structures of 69 doublelayers with a thickness of 40 Angstrom, it is shown that the high-frequency mode (HFM) of electron-gas SNMS (e(-)-gas SNMS) for the analysis of insulators provides the same high depth resolution as the conventional direct-bombardment mode (DBM) of this technique.

引用

页码：510 / 513

页数：4

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