COMPOSITIONAL CHARACTERIZATION OF MICROWAVE PLASMA A-SI-H FILMS

被引：21

作者：

CURRIE, JF ^{[1
]}

DEPELSENAIRE, P ^{[1
]}

HUOT, JP ^{[1
]}

PAQUIN, L ^{[1
]}

WERTHEIMER, MR ^{[1
]}

YELON, A ^{[1
]}

BRASSARD, C ^{[1
]}

LECUYER, J ^{[1
]}

GROLEAU, R ^{[1
]}

MARTIN, JP ^{[1
]}

机构：

[1] UNIV MONTREAL,PHYS NUCL LAB,MONTREAL H3C 3A7,QUEBEC,CANADA

来源：

CANADIAN JOURNAL OF PHYSICS | 1983年 / 61卷 / 04期

关键词：

D O I：

10.1139/p83-073

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：582 / 590

页数：9

共 25 条

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[13] MADAN AH, 1981, SOL CELLS, V4, P205
[14] ELECTRICAL AND COMPOSITIONAL HETEROGENEITY OF AMORPHOUS SI-H FILMS
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 207 - 212
[15] Northcliffe L. S., 1970, NUCL DATA A, V7, P233
[16] REVERSIBLE CHANGES IN THE OSCILLATOR-STRENGTHS OF SI-H VIBRATIONS IN A-SI-H INDUCED BY HE+-ION BOMBARDMENT
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[17] INFRARED-SPECTRUM AND STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (01): : 43 - 56
[18] BONDING IN HYDROGENATED AMORPHOUS-SILICON
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[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 773 - 777
[19] REACTION-MECHANISMS OF THE RADIO-FREQUENCY GLOW-DISCHARGE DEPOSITION PROCESS IN SILANE-HELIUM
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[J]. THIN SOLID FILMS, 1979, 60 (02) : 147 - 155
[20] A STUDY OF THE SILANE GLOW-DISCHARGE DEPOSITION BY ISOTOPIC LABELING
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[J]. THIN SOLID FILMS, 1981, 77 (04) : 287 - 300

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