ELLIPSOMETRIC THICKNESS MEASUREMENT OF COMBINED A-SI AND TI FILMS ON C-SI

被引：2

作者：

JANS, JC ^{[1
]}

YOO, CS ^{[1
]}

机构：

[1] TAIWAN SEMICOND MFG CO,HSINCHU,TAIWAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 09期

关键词：

D O I：

10.1149/1.2086065

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Experimental and theoretical results are reported on the use of monochromatic ellipsometry to measure the thickness of amorphous silicon (a-Si) and titanium (Ti) overlayers and of combined a-Si/Ti overlayers on crystalline silicon (c-Si) substrates. Accurate thickness monitoring of these overlayer structures is very important for the formation of titanium silicide straps to be used as an interconnect in integrated circuit technology. The presence of an intermediate Ti film between the a-Si and the c-Si is shown to considerably enhance the ellipsometric sensitivity to variations in a-Si thickness.

引用

页码：2826 / 2829

页数：4

共 16 条

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[2]

[Anonymous], 1985, HDB OPTICAL CONSTANT

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