ELECTRICAL BEHAVIOR OF LOW-POWER RF MAGNETRON-SPUTTERED INDIUM TIN OXIDE-FILMS ON SILICON SUBSTRATE

被引：14

作者：

CHIOU, BS ^{[1
]}

HSIEH, ST ^{[1
]}

WU, WF ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV, INST ELECTR, HSINCHU, TAIWAN

来源：

APPLIED SURFACE SCIENCE | 1994年 / 74卷 / 04期

关键词：

D O I：

10.1016/0169-4332(94)90111-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Indium tin oxide (ITO) films were deposited onto p-Si substrates by RF magnetron sputtering. Small sputtering powers (less-than-or-equal-to 28 W) were supplied to a one-inch diameter target, and a low substrate temperature (< 80-degrees-C) was maintained during sputtering. The electrical behavior of the ITO films was explored. The relationship (carrier mobility) a (carrier concentration)-0.64 suggests an impurity scattering mechanism for the transport of charge carriers. A linear current-voltage characteristic and a voltage-independent capacitance indicate that the low-power sputtering process does not damage the ITO/p-Si interface.

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页码：297 / 302

页数：6

相关论文

共 23 条

[1] EFFECT OF TIN ADDITIONS ON INDIUM OXIDE SELECTIVE COATINGS [J].

AGNIHOTRI, OP ;

SHARMA, AK ;

GUPTA, BK ;

THANGARAJ, R .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (05) :643-&

[2] SPRAY-DEPOSITED ITO-SILICON SIS HETEROJUNCTION SOLAR-CELLS [J].

ASHOK, S ;

SHARMA, PP ;

FONASH, SJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :725-730

[3] ON RESOLVING THE ANOMALY OF INDIUM-TIN OXIDE SILICON JUNCTIONS [J].

ASHOK, S ;

FONASH, SJ ;

SINGH, R ;

WILEY, P .

ELECTRON DEVICE LETTERS, 1981, 2 (07) :184-186

[4] GROUND RADIATION TESTS AND FLIGHT ATOMIC OXYGEN TESTS OF ITO PROTECTIVE COATINGS FOR GALILEO SPACECRAFT [J].

BOUQUET, FL ;

MAAG, CR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1408-1412

[5] PREPARATION OF CONDUCTING AND TRANSPARENT THIN-FILMS OF TIN-DOPED INDIUM OXIDE BY MAGNETRON SPUTTERING [J].

BUCHANAN, M ;

WEBB, JB ;

WILLIAMS, DF .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :213-215

[6] RF MAGNETRON-SPUTTERED INDIUM TIN OXIDE FILM ON A REACTIVELY ION-ETCHED ACRYLIC SUBSTRATE [J].

CHIOU, BS ;

HSIEH, ST .

THIN SOLID FILMS, 1993, 229 (02) :146-155

[7]

CHIOU BS, UNPUB J AM CERAM SOC

[8]

CHOPRA KL, 1981, THIN SOLID FILMS, V80, P143

[9] TRANSPARENT, CONDUCTING INDIUM TIN OXIDE-FILMS FORMED ON LOW OR MEDIUM TEMPERATURE SUBSTRATES BY ION-ASSISTED DEPOSITION [J].

DOBROWOLSKI, JA ;

HO, FC ;

MENAGH, D ;

SIMPSON, R ;

WALDORF, A .

APPLIED OPTICS, 1987, 26 (24) :5204-5210

[10] EFFICIENT PHOTOVOLTAIC HETEROJUNCTIONS OF INDIUM TIN OXIDES ON SILICON [J].

DUBOW, JB ;

BURK, DE ;

SITES, JR .

APPLIED PHYSICS LETTERS, 1976, 29 (08) :494-496