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EFFECT OF HYDROGENATION ON HOLE INTERSUBBAND ABSORPTION IN DELTA-DOPED SI LAYERS

被引：2
作者：
ARBETENGELS, V
WANG, KL
KARUNASIRI, RPG
PARK, JS
机构：
[1] Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 18期
关键词：
D O I：
10.1063/1.106085
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of hydrogen passivation on the intersubband absorption in delta-doped multiple Si layers is studied. The passivation is carried out using a dc plasma of hydrogen in a quartz reactor. Fourier transform infrared spectroscopy is used to measure the absorption spectra and the effectiveness of the passivation of boron acceptors. The intersubband absorption intensity is reduced considerably upon H passivation and the effectiveness of the hydrogenation is a function of the boron concentration in the delta-layers and the duration of the exposition to the H plasma. A resonance peak at 1870 cm-1 is observed after passivation, characteristics of a boron-hydrogen complex. After annealing the samples in nitrogen at sufficiently high temperature, the absorption intensity recovers nearly to its initial value and the process of hydrogenation is reversed. The activation energy of the dissociation of the boron-hydrogen complex is calculated and found to be 1.9 +/- 0.1 eV, in reasonable agreement with the B-H complex dissociation energy in bulk Si.
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收藏
页码：2248 / 2250
页数：3
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