AMORPHOUS-SILICON PRODUCED BY ION-IMPLANTATION - EFFECTS OF ION MASS AND THERMAL ANNEALING

[1] Baranova E. C., 1973, Radiation Effects, V18, P21, DOI 10.1080/00337577308234712

[2] BUORGOIN J, 1976, ION IMPLANTATION SEM

[3] CONNELL GAN, 1979, AMORPHOUS SEMICONDUC

[4] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1119 - 1127

[5] EFFECTS OF THERMAL ANNEALING ON THE REFRACTIVE-INDEX OF AMORPHOUS-SILICON PRODUCED BY ION-IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 172 - 174

[6] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &

[7] ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF IMPLANTATION DOPED SILICON BY INFRARED REFLECTION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 60 (1-4): : 35 - 47

[8] HIGH-FLUENCE IMPLANTATIONS OF SILICON - LAYER THICKNESS AND REFRACTIVE-INDEXES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3294 - 3303

[9] OPTICAL-PROPERTIES AND STRUCTURE OF AMORPHOUS SILICON FILMS PREPARED BY CVD [J]. SOLAR ENERGY MATERIALS, 1979, 1 (1-2): : 11 - 27

[10] INCREASE OF REFRACTIVE-INDEX OF SILICON FILMS BY DANGLING BONDS [J]. THIN SOLID FILMS, 1973, 18 (01) : 45 - 52

[1] Baranova E. C., 1973, Radiation Effects, V18, P21, DOI 10.1080/00337577308234712

[2] BUORGOIN J, 1976, ION IMPLANTATION SEM

[3] CONNELL GAN, 1979, AMORPHOUS SEMICONDUC

[4] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1119 - 1127

[5] EFFECTS OF THERMAL ANNEALING ON THE REFRACTIVE-INDEX OF AMORPHOUS-SILICON PRODUCED BY ION-IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 172 - 174

[6] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &

[7] ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF IMPLANTATION DOPED SILICON BY INFRARED REFLECTION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 60 (1-4): : 35 - 47

[8] HIGH-FLUENCE IMPLANTATIONS OF SILICON - LAYER THICKNESS AND REFRACTIVE-INDEXES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3294 - 3303

[9] OPTICAL-PROPERTIES AND STRUCTURE OF AMORPHOUS SILICON FILMS PREPARED BY CVD [J]. SOLAR ENERGY MATERIALS, 1979, 1 (1-2): : 11 - 27

[10] INCREASE OF REFRACTIVE-INDEX OF SILICON FILMS BY DANGLING BONDS [J]. THIN SOLID FILMS, 1973, 18 (01) : 45 - 52