DRY PROCESSING OF HIGH-RESOLUTION AND HIGH ASPECT RATIO STRUCTURES IN GAAS-ALXGA1-XAS FOR INTEGRATED-OPTICS

被引:41
作者
SOMEKH, S [1 ]
CASEY, HC [1 ]
机构
[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
关键词
D O I
10.1364/AO.16.000126
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:126 / 136
页数:11
相关论文
共 51 条
[1]   GAAS-GAALAS DISTRIBUTED-FEEDBACK DIODE LASERS WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT [J].
AIKI, K ;
NAKAMURA, M ;
UMEDA, J ;
YARIV, A ;
KATZIR, A ;
YEN, HW .
APPLIED PHYSICS LETTERS, 1975, 27 (03) :145-146
[2]   DISTRIBUTED-FEEDBACK DOUBLE-HETEROSTRUCTURE GAAS INJECTION LASER WITH FUNDAMENTAL GRATING [J].
ANDERSON, DB ;
AUGUST, RR ;
COKER, JE .
APPLIED OPTICS, 1974, 13 (12) :2742-2744
[3]  
[Anonymous], COMMUNICATION
[4]   PREDICTION OF ION-BOMBARDED SURFACE TOPOGRAPHIES USING FRANKS KINEMATIC THEORY OF CRYSTAL DISSOLUTION [J].
BARBER, DJ ;
FRANK, FC ;
MOSS, M ;
STEEDS, JW ;
TSONG, IST .
JOURNAL OF MATERIALS SCIENCE, 1973, 8 (07) :1030-1040
[5]   SECONDARY PROCESSES IN EVOLUTION OF SPUTTER-TOPOGRAPHIES [J].
BAYLY, AR .
JOURNAL OF MATERIALS SCIENCE, 1972, 7 (04) :404-&
[6]  
Belyakov L. V., 1974, Soviet Physics - Technical Physics, V19, P837
[7]   SINGLE-HETEROSTRUCTURE DISTRIBUTED-FEEDBACK GAAS-DIODE LASERS [J].
BURNHAM, RD ;
SCIFRES, DR ;
STREIFER, W .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :439-449
[8]   CONSIDERATIONS ON HIGH-RESOLUTION PATTERNS ENGRAVED BY ION ETCHING [J].
CANTAGREL, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) :483-486
[9]  
CANTAGREL M, 1973, J MATER SCI, V8, P1711, DOI 10.1007/BF02403521
[10]   GROWTH OF TOPOGRAPHY DURING SPUTTERING OF AMORPHOUS SOLIDS .4. GENERALIZED THEORY [J].
CARTER, G ;
COLLIGON, JS ;
NOBES, MJ .
JOURNAL OF MATERIALS SCIENCE, 1973, 8 (10) :1473-1481