DEEP HOLE TRAP PROPERTIES OF P-TYPE ZNSE GROWN BY MOLECULAR-BEAM EPITAXY

被引：26

作者：

ANDO, K ^{[1
]}

KAWAGUCHI, Y ^{[1
]}

OHNO, T ^{[1
]}

OHKI, A ^{[1
]}

ZEMBUTSU, S ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, TOKAI, IBARAKI 31911, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.110396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristics of deep hole traps in p-type ZnSe are studied by means of a transient capacitance spectroscopy technique. p-type ZnSe layers were grown by molecular beam epitaxy using radical N2 (nitrogen) doping. A major deep hole trap with a thermal hole activation energy of DELTAE= 720 +/- 30 meV is detected for two different sample structures: (a) n+-p ZnSe diodes and (b) Au-p ZnSe double-Schottky diodes. The trap concentration tends to increase as the net acceptor (N) concentration increases. The deep hole trap has revealed an exponential temperature dependence of hole capture rates, indicating a strong electron-lattice coupling in carrier capture/emission processes.

引用

页码：191 / 193

页数：3

共 9 条

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