PHOTOLUMINESCENCE OF HOMOEPITAXIAL 3C-SIC ON SUBLIMATION-GROWN 3C-SIC SUBSTRATES

被引：19

作者：

NISHINO, K

KIMOTO, T

MATSUNAMI, H

机构：

[1] Department of Electronic Science and Engineering, Kyoto University, Sakyo, Kyoto, 606-01, Yoshidahonmachi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 9A期

关键词：

3C-SIC; HOMOEPITAXIAL GROWTH; PHOTOLUMINESCENCE; CVD; SUBLIMATION METHOD;

D O I：

10.1143/JJAP.34.L1110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bulk 3C-Sic growth by a sublimation method was carried out. The grown layer was used as a substrate for chemical vapor deposition, that is, homoepitaxial growth of 3C-SiC was carried out for the first time. The substrate exhibited some impurity-related photoluminescence peaks and no exciton-related peak was observed. The epilayer had some sharp exciton-related peaks near the band edge, which showed high crystallinity of the epilayer. Au Schottky barrier diodes were fabricated on the epilayer, and the diode showed good characteristics. The quality of 3C-SiC was improved by homoepitaxial growth.

引用

收藏

页码：L1110 / L1113

页数：4

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