BULK GROWTH OF SINGLE-CRYSTAL CUBIC SILICON-CARBIDE BY VACUUM SUBLIMATION METHOD

被引：14

作者：

FURUKAWA, K

TAJIMA, Y

SAITO, H

FUJII, Y

SUZUKI, A

NAKAJIMA, S

机构：

[1] Central Research Laboratories, Corporate Research and Development Group, Tenri, Nara, 632

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 5A期

关键词：

CUBIC SILICON CARBIDE; SUBLIMATION; BULK CRYSTAL; DOUBLE POSITIONING BOUNDARIES; SINGLE CRYSTAL;

D O I：

10.1143/JJAP.32.L645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bulk single crystals of cubic silicon carbide up to 4 mm in length have been obtained by means of the modified sublimation method. Growth temperature and pressure were examined in order to increase the growth rate. The temperatures of seed crystal and source material and the temperature gradient were 1750-degrees-C, 2250-degrees-C and 100-degrees-C cm-1, respectively. The pressure was approximately 10(-2) Pa. The growth rate obtained was 0.8 mm -h-1, which is one order of magnitude larger than previously reported values. Raman spectroscopy, reflectoin high-energy electron diffraction analysis and molten KOH etching show that bulk crystals grown on 6H(0001) and 3C(111) seed crystals were 3C(111) single crystals. The crystal on the 6H(0001) showed no double positioning boundaries.

引用

页码：L645 / L647

页数：3

共 19 条

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