AN APPROACH TO VERSATILE HIGHLY-UNIFORM MOVPE GROWTH - THE FLOW CONTROLLED STAGNATION POINT FLOW REACTOR

We present an approach to versatile highly-uniform MOVPE growth using the controlled stagnation point flow reactor. Our approach for uniform growth involves two concepts: (1) realizing the stagnation point flow condition in a vertical reactor configuration and (2) introducing a method for versatile flow-field control using the flow-controlled multiple gas-injector technique. The versatility of the flow-control technique was investigated by evaluating how radial deposition rate uniformity is affected by variation in several hydrodynamic and reactor configuration factors: the inlet flow rate, operating pressure, susceptor temperature, susceptor rotation speed, and the inlet and susceptor separation. We confirmed that a spatially uniform deposition rate can be obtained over a wide range of hydrodynamic and configuration parameters, demonstrating that the flow-control technique can provide a stable stagnation point flow field. Even when the ideal stagnation point flow-field is disturbed, for example, by high temperature susceptor heating, it could be completely compensated by adjusting the flow rate ratio for multiple injectors, showing our technique's ability to control flow-fields. By using this technique, we obtained excellent uniformities in both layer thickness and alloy composition for two important materials - GaInAsP and AlGaInP - in the same reactor.