DEEP-LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS OF MAJORITY CARRIER TRAPS IN NEUTRON-IRRADIATED N-TYPE SILICON DETECTORS

被引：40

作者：

BORCHI, E

BERTRAND, C

LEROY, C

BRUZZI, M

FURETTA, C

PALUDETTO, R

RANCOITA, PG

VISMARA, L

GIUBELLINO, P

机构：

[1] IST NAZL FIS NUCL,FLORENCE,ITALY

[2] MCGILL UNIV,MONTREAL H3A 2T5,QUEBEC,CANADA

[3] NATL INST NUCL PHYS,MILAN,ITALY

[4] IST NAZL FIS NUCL,TURIN,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1989年 / 279卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(89)91093-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：277 / 280

页数：4

共 9 条

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[5] NEUTRON-SPECTRA OF AM-241-B, AM-241-BE, AM-241-F, CM-242-BE, PU-238-C-13 AND CF-252 ISOTOPIC NEUTRON SOURCES
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[J]. INTERNATIONAL JOURNAL OF APPLIED RADIATION AND ISOTOPES, 1973, 24 (10): : 585 - 591
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[8] COMPARISON OF NEUTRON AND 2 MEV ELECTRON DAMAGE IN N-TYPE SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (03) : 3564 - 3568
[9] RADIATION DEFECTS IN FAST NEUTRON-IRRADIATED, ELECTRON-IRRADIATED, AND GAMMA-IRRADIATED SILICON
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[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1987, 100 (01): : K13 - K16

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